Phys. Rev. Lett. 65, 2274–2277 (1990)Microstructural evolution of ultrathin amorphous silicon films by real-time spectroscopic ellipsometryReceived 12 July 1990; published in the issue dated 29 October 1990 The nucleation of thin-film amorphous silicon (a-Si), sputter deposited on oxidized c-Si, is investigated by real-time spectroscopic ellipsometry from 1.5 to 4.5 eV with a resolution of 3 s and a repetition period of 15 s. Analysis of real-time spectra provides unprecedented sensitivity and quantitative information on the microstructural evolution. Under preparation conditions resulting in a-Si of the highest bulk Si-Si bond-packing density, an abrupt transition representing the onset of bulk film growth can be identified unambiguously when nuclei reach a thickness of 13±1 Å. © 1990 The American Physical Society URL:
http://link.aps.org/doi/10.1103/PhysRevLett.65.2274
DOI:
10.1103/PhysRevLett.65.2274
PACS:
68.55.Jk, 07.60.Fs, 78.65.Gb, 81.15.Cd
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