Phys. Rev. Lett. 66, 1078–1081 (1991)Numerical simulation of intrinsic bistability and high-frequency current oscillations in resonant tunneling structuresReceived 17 September 1990; published in the issue dated 25 February 1991 Intrinsic high-frequency oscillations (≊2.5 THz) in current and corresponding quantum-well density have been simulated for the first time for a fixed-bias voltage in the negative differential resistance (NDR) region of the current-voltage (I-V) characteristics of a resonant tunneling diode. Scattering and self-consistency are included. Hysteresis and ‘‘plateaulike’’ behavior of the time-averaged I-V curve are simulated in the NDR region. Intrinsic bistability is manifested by the phenomenon of unstable electron charge buildup and ejection from the quantum well. © 1991 The American Physical Society URL:
http://link.aps.org/doi/10.1103/PhysRevLett.66.1078
DOI:
10.1103/PhysRevLett.66.1078
PACS:
73.40.Gk
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