Phys. Rev. Lett. 67, 2529–2532 (1991)Nonlinear 1/f noise in amorphous siliconReceived 8 February 1991; published in the issue dated 28 October 1991 Measurements of coplanar current fluctuations in n-type hydrogenated amorphous silicon (a-Si:H) find that the spectral density of the noise accurately obeys a 1/f frequency dependence for frequency f in the range 1<f<103 Hz over a temperature range 300≤T≤450 K. The noise power density displays a power-law dependence on the dc current, where the power-law exponent b increases with temperature from b∼1 at 350 K to ∼2.5 at 450 K. These results are discussed in terms of models for noise in composite and inhomogeneous materials. © 1991 The American Physical Society URL:
http://link.aps.org/doi/10.1103/PhysRevLett.67.2529
DOI:
10.1103/PhysRevLett.67.2529
PACS:
72.70.+m, 72.80.Ng, 73.50.Td
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