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Phys. Rev. Lett. 67, 3696–3699 (1991)

Morphological instability in epitaxially strained dislocation-free solid films

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B. J. Spencer, P. W. Voorhees, and S. H. Davis
Department of Engineering Sciences and Applied Mathematics, Northwestern University, Evanston, Illinois 60208
Department of Materials Science Engineering, Northwestern University, Evanston Illinois 60208

Received 16 August 1991; published in the issue dated 23 December 1991

We perform the first analysis of the morphological instability of a growing epitaxially strained dislocation-free olid film. We derive an evolution equation for the film surface based on surface diffusion driven by a stress-dependent chemical potential. From the time-dependent linear stability problem we determine the conditions for which a growing film is unstable. Our results reveal that the critical film thickness for instability depends on the growth rate of the film itself, and that the instability we describe exhibits many of the observed features of the onset of the ‘‘island instability.’’

© 1991 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevLett.67.3696
DOI:
10.1103/PhysRevLett.67.3696
PACS:
68.55.-a