Phys. Rev. Lett. 68, 1947–1950 (1992)Thin oxide film growth on Fe(100)Received 13 November 1991; published in the issue dated 23 March 1992 The process of oxide formation at various temperatures in the range 25–300 °C on a well-defined Fe(100) surface up to oxide thicknesses of 4 nm has been investigated using HEIS, NRA, AES, and ellipsometry. The conditions for the applicability of the oxidation theory of Fromhold and Cook are met and this theory is compared to the data. The several stages with their rate-limiting steps are identified. In the regime where the oxidation rate is governed by the thermionic emission current across the metal-oxide interface, the oxidation process is described in a quantitatively adequate manner. © 1992 The American Physical Society URL:
http://link.aps.org/doi/10.1103/PhysRevLett.68.1947
DOI:
10.1103/PhysRevLett.68.1947
PACS:
81.60.Bn, 66.30.-h, 68.55.-a
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