Phys. Rev. Lett. 68, 2232–2234 (1992)Raman scattering in metallic Si and Ge up to 50 GPaReceived 11 December 1991; published in the issue dated 6 April 1992 Optical phonons in metallic high-pressure phases of Si and Ge were studied up to 50 GPa by Raman scattering. Two Raman bands (LO, TO) were observed in the β-tin phase, one of which (LO) becomes soft on approaching the transition to primitive hexagonal. For hcp-Si there is one Raman-active mode (TO), and an additional mode is observed in the stability field of Si-VI. The available theoretical results agree within (10–20)% with the experimental results. © 1992 The American Physical Society URL:
http://link.aps.org/doi/10.1103/PhysRevLett.68.2232
DOI:
10.1103/PhysRevLett.68.2232
PACS:
78.30.Er, 62.50.+p
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