Phys. Rev. Lett. 68, 3920–3923 (1992)Picosecond capture of photoexcited holes by shallow acceptors in p-type GaAsReceived 14 February 1992; published in the issue dated 29 June 1992 Ultrafast recombination of holes with shallow acceptors in a III-V semiconductor is directly observed for the first time, by means of picosecond infrared spectroscopy. Neutral impurities in p-doped GaAs at low temperature are photoionized by picosecond infrared excitation. The recombination of free holes with negatively charged acceptors—monitored via absorption changes below the band edge—occurs on a time scale of several tens of picoseconds, following a nonexponential kinetics. Emission of longitudinal-optical phonons by the free holes is found to be the dominant mechanism of recombination. © 1992 The American Physical Society URL:
http://link.aps.org/doi/10.1103/PhysRevLett.68.3920
DOI:
10.1103/PhysRevLett.68.3920
PACS:
78.47.+p, 71.55.Eq, 78.30.Fs
|
|
About | Terms and Conditions | Subscriptions | Search | Help
Use of the American Physical Society websites and journals implies that the user has read and agrees to our Terms and Conditions and any applicable Subscription Agreement. Physical Review®, Physical Review Letters®, Reviews of Modern Physics®, and Physical Review Special Topics® are trademarks of the American Physical Society.