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Phys. Rev. Lett. 69, 1997–2000 (1992)

Experimental evidence for parity-based 2e periodicity in a superconducting single-electron tunneling transistor

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M. T. Tuominen, J. M. Hergenrother, T. S. Tighe, and M. Tinkham
Department of Physics and Division of Applied Sciences, Harvard University, Cambridge, Massachusetts 02138

Received 12 June 1992; published in the issue dated 28 September 1992

We present experimental current-voltage (I-V) measurements on an Al-Al2O3-Al single-electron tunneling transistor in the superconducting state. We observe a variety of features which result from Cooper-pair tunneling processes. At low bias voltages and low temperatures we find that the I-V curve is 2e periodic with respect to the gate-induced charge. Remarkably, this periodicity persists up to 300 mK, a behavior which we interpret as strong evidence of an incremental free energy which depends on whether the number of electrons on the superconducting island is even or odd.

© 1992 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevLett.69.1997
DOI:
10.1103/PhysRevLett.69.1997
PACS:
74.50.+r, 73.40.Gk, 73.40.Rw