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Phys. Rev. Lett. 69, 925–928 (1992)

Lattice mismatch dislocations in a preferentially sputtered alloy studied by scanning tunneling microscopy

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M. Schmid, A. Biedermann, H. Stadler, and P. Varga
Institut für Allgemeine Physik, Technische Universität Wien, A-1040 Wien, Austria

Received 9 March 1992; published in the issue dated 10 August 1992

Scanning tunneling microscopy (STM) on a sputtered and annealed Pt25Ni75(111) single crystal reveals a network of subsurface lattice mismatch dislocations caused by platinum enrichment due to preferential sputtering and recoil mixing. Atomically resolved STM topographs are compared with simulations of these dislocations using embedded atom potentials. This allows one to estimate the depth of the dislocations, and thus the thickness of Pt enrichment, which is three monolayers on the 500 eV Xe+ sputtered and five monolayers on the Ar+ sputtered surface, compatible with the depth of radiation damage.

© 1992 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevLett.69.925
DOI:
10.1103/PhysRevLett.69.925
PACS:
61.70.Jc, 61.80.Jh, 68.35.Dv, 68.35.Fx