Phys. Rev. Lett. 70, 3463–3466 (1993)Quasidiffusion and the localized phonon source in photoexcited SiReceived 8 March 1993; published in the issue dated 31 May 1993 Previous observations of heat pulses produced by localized photoexcitation of silicon do not support the predictions of phonon ‘‘quasidiffusion’’ via anharmonic decay and elastic scattering. Our experiments, with controlled boundary conditions, verify that quasidiffusive theory is relevant in Si under very weak photoexcitation. Beyond this domain a transition to a localized source of low frequency phonons is attributed to excited carrier interactions. Photoluminescence experiments confirm the presence of electron-hole droplets coincident with this localized phonon source. © 1993 The American Physical Society URL:
http://link.aps.org/doi/10.1103/PhysRevLett.70.3463
DOI:
10.1103/PhysRevLett.70.3463
PACS:
66.70.+f, 63.20.Hp, 63.20.Ls
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