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Phys. Rev. Lett. 71, 727–730 (1993)

Shape of small silicon clusters

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Efthimios Kaxiras
Department of Physics and Division of Applied Sciences, Harvard University, Cambridge, Massachusetts 02138

Koblar Jackson
Department of Physics, Central Michigan University, Mt. Pleasant, Michigan 48859

See Also: Erratum

Received 26 January 1993; published in the issue dated 2 August 1993

We propose an explanation for the experimentally observed transition in the shape of silicon clusters of size 20≤N≤40: Elongated shapes of low energy can be obtained by stacking stable subunits, while concurrent optimization of surface-to-volume ratio and surface structure leads to compact shapes. A transition in shape from elongated to compact structures is expected as the size increases beyond a critical value at which interior atoms become stable. Our proposal is backed by extensive first-principles calculations on the energetics of two classes of Si clusters, which suggest a critical size bounded by 24≤N≤28, in good agreement with experimental observations.

© 1993 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevLett.71.727
DOI:
10.1103/PhysRevLett.71.727
PACS:
61.50.Lt, 36.40.+d

See Also

Erratum: Efthimios Kaxiras and Koblar Jackson, Shape of Small Silicon Clusters, Phys. Rev. Lett. 71, 2354 (1993).