Phys. Rev. Lett. 71, 1234–1237 (1993)Identification of strained silicon layers at Si-SiO2 interfaces and clean Si surfaces by nonlinear optical spectroscopyReceived 1 February 1993; published in the issue dated 23 August 1993 Optical second-harmonic and sum-frequency spectra of clean and oxidized Si(100) and Si(111) samples reveal a strong resonance band at 3.3 eV photon energy. It is concluded that the resonance arises from direct transitions between valence and conduction band states in a few monolayers of strained silicon at the Si-SiO2 interface and at the selvedge of clean reconstructed silicon surfaces. © 1993 The American Physical Society URL:
http://link.aps.org/doi/10.1103/PhysRevLett.71.1234
DOI:
10.1103/PhysRevLett.71.1234
PACS:
73.40.Qv, 42.62.Fi, 42.65.Ky, 73.20.-r
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