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Phys. Rev. Lett. 72, 3194–3197 (1994)

Saturation and scaling of epitaxial island densities

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C. Ratsch and A. Zangwill
School of Physics, Georgia Institute of Technology, Atlanta, Georgia 30332

P. Šmilauer and D. D. Vvedensky
The Blackett Laboratory, Imperial College, London SW7 2BZ, United Kingdom

Received 4 October 1993; published in the issue dated 16 May 1994

The aggregation of adatoms into 2D islands is studied as a function of coverage FTHETA and the ratio of surface diffusion rate to deposition rate gerR=D/F by Monte Carlo simulations of a model of epitaxial growth that permits atoms to detach from island edges at a rate determined by a pair bond energy EN. The total island density is observed to saturate before coalescence becomes important. In this regime, the density of adatoms N1FTHETA-rgerR while the density of islands composed of s>1 atoms NsFTHETAs-2g(s/〈s〉) where the average island size 〈s〉∼FTHETAgerRx. The exponents r, ω, and χ vary smoothly with EN.

© 1994 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevLett.72.3194
DOI:
10.1103/PhysRevLett.72.3194
PACS:
68.55.-a, 82.20.Mj, 61.43.Hv