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Phys. Rev. Lett. 73, 601–604 (1994)

Surface Shifts of 4f Electron-Addition and Electron-Removal States in Gd(0001)

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A. V. Fedorov*, E. Arenholz, K. Starke, E. Navas, L. Baumgarten, C. Laubschat, and G. Kaindl
Institut für Experimentalphysik, Freie Universität Berlin, Arnimallee 14, D-14195 Berlin, Germany

Received 2 September 1993; published in the issue dated 25 July 1994

Using inverse photoemission (IPE), a surface shift of the 4f8 electron-addition state to lower energies by δsea=-0.48±0.04 eV is observed for Gd(0001). The analogous shift of the 4f6 electron-removal state, as obtained by photoemission (PE), amounts to δser=-0.29±0.03 eV, i.e., also to lower energies. This allows a separation of the surface shifts into initial-state and final-state contributions; the latter reveal that the IPE and PE final states are better screened at the surface than in the bulk. An IPE peak at 3.15 eV above EF is assigned to an image-potential surface state.

© 1994 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevLett.73.601
DOI:
10.1103/PhysRevLett.73.601
PACS:
79.60.Bm, 71.28.+d, 73.20.-r, 79.20.Kz

*Permanent address: Institute of Physics, St. Petersburg State University, 199904 St. Petersburg, Russia.