Phys. Rev. Lett. 74, 2074–2077 (1995)Adsorption, Abstraction, and Pairing of Atomic Hydrogen on Si(100)- (2×1)Received 17 October 1994; published in the issue dated 13 March 1995 Using thermal desorption mass spectrometry, we have shown unambiguously that the adsorption of atomic hydrogen on Si(100)- (2×1) leads to hydrogen pairing on silicon dimers at surface temperatures as low as 150 K and coverages as low as 0.2 monolayer. A detailed study of the adsorption kinetics shows a high probability of an abstraction reaction together with a coverage-dependent adsorption probability which is greater than expected for Langmuirian adsorption. These results, together with the known saturation coverage, are unified within the context of a “hot-precursor” mechanism for the adsorption of atomic hydrogen. © 1995 The American Physical Society URL:
http://link.aps.org/doi/10.1103/PhysRevLett.74.2074
DOI:
10.1103/PhysRevLett.74.2074
PACS:
68.45.Da, 82.20.-w, 82.65.My, 82.65.Yh
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