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APS » Journals » Phys. Rev. Lett. » Volume 74 » Issue 14
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Phys. Rev. Lett. 74, 2682–2685 (1995)

Temperature and Intensity Dependence of Intersubband Relaxation Rates from Photovoltage and Absorption

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J. N. Heyman
Department of Physics and Astronomy, Macalester College, St. Paul, Minnesota 55105

K. Unterrainer, K. Craig, B. Galdrikian, and M. S. Sherwin
Department of Physics and Center for Free Electron Laser Studies, University of California at Santa Barbara, Santa Barbara, California 93106

K. Campman, P. F. Hopkins, and A. C. Gossard
Materials Department, University of California at Santa Barbara, Santa Barbara, California 93106

Received 22 August 1994; published in the issue dated 3 April 1995

We report intersubband-scattering times (T1) in a semiconductor heterostructure with intersubband spacing below the LO phonon energy. T1 is determined by simultaneous measurements of the intersubband absorption and the photovoltage induced by far-infrared radiation (FIR) near the intersubband transition frequency. At the lowest temperature (T = 10K) and FIR intensity (I = 10mW/cm2), T1 = 1.2±0.4ns, several times longer than predicted theoretically. T1 decreases strongly with increasing temperature and FIR intensity, to 20 ps at T = 50K in the linear regime, and to 15 ps at T = 10K and I = 2kW/cm2.

© 1995 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevLett.74.2682
DOI:
10.1103/PhysRevLett.74.2682
PACS:
42.65.Ky, 73.20.Dx, 78.55.-m
 
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