Phys. Rev. Lett. 75, 2542–2545 (1995)Vertically Self-Organized InAs Quantum Box Islands on GaAs(100)Received 6 April 1995; published in the issue dated 25 September 1995 Coherent InAs islands separated by GaAs spacer layers are shown to exhibit self-organized growth along the vertical (i.e., growth) direction. The driving force for such vertically self-organized growth is shown to be the interacting strain fields induced by the islands which give rise to a preferred direction for In migration. A model analysis accounting for the mechanochemical surface diffusion gives an island average size and average separation dependent characteristic spacer layer thickness z0 below which a vertically self-organized growth occurs. © 1995 The American Physical Society URL:
http://link.aps.org/doi/10.1103/PhysRevLett.75.2542
DOI:
10.1103/PhysRevLett.75.2542
PACS:
68.35.Bs, 61.16.Bg, 68.55.Bd
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