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Phys. Rev. Lett. 75, 4516–4519 (1995)

In-Plane and ĉ-Axis Microwave Penetration Depth of Bi2Sr2Ca1Cu2O8+δ Crystals

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T. Jacobs and S. Sridhar
Physics Department, Northeastern University, 360 Huntington Avenue, Boston, Massachusetts 02115

Qiang Li
Material Science Division, Brookhaven National Laboratory, P.O. Box 5000, Upton, New York 11973

G. D. Gu and N. Koshizuka
Superconductivity Research Laboratory, ISTEC 10-13, Shinonome I-chrome, Koto-ku, Tokyo, 135, Japan

Received 3 August 1995; published in the issue dated 11 December 1995

The complete temperature dependences of the in-plane and ĉ-axis microwave (10 GHz) penetration depth λ(T) and the surface resistance Rs(T) of high quality Bi2Sr2Ca1Cu2O8+δ crystals are reported. In contrast to earlier measurements, a leading λabT dependence is observed at low temperatures, consistent with nodes in the in-plane gap. The overall behavior of λab(T) and Rsab(T) is similar to that of YBa2Cu3Oy at low T, but differs at temperatures near Tc. The ĉ-axis penetration depth λc(T) is shown to best agree with a model of weakly coupled superconducting layers with nodes in the gap.

© 1995 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevLett.75.4516
DOI:
10.1103/PhysRevLett.75.4516
PACS:
74.25.Nf, 74.72.Bk, 74.50.+r