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Phys. Rev. Lett. 75, 914–917 (1995)

Lattice Effects on the Magnetoresistance in Doped LaMnO3

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H. Y. Hwang1,2, S-W. Cheong1, P. G. Radaelli3, M. Marezio1,4, and B. Batlogg1
1AT&T Bell Laboratories, Murray Hill, New Jersey 07974
2Joseph Henry Laboratories of Physics, Princeton University, Princeton, New Jersey 08544
3Institute Laue-Langevin, BP 156, 38042 Grenoble Cedex 9, France
4Laboratoire de Cristallographie, Centre National de la Recherche Scientifique-UJF, BP 166, 38042 Grenoble Cedex 9, France

Received 22 March 1995; published in the issue dated 31 July 1995

A detailed study of doped LaMnO3 with fixed carrier concentration reveals a direct relationship between the Curie temperature Tc and the average ionic radius of the La site rA, which is varied by substituting different rare earth ions for La. With decreasing rA, magnetic order and significant magnetoresistance occur at lower temperatures with increasing thermal hysteresis, and the magnitude of the magnetoresistance increases dramatically. These results show that the notion of “double exchange” must be generalized to include changes in the Mn-Mn electronic hopping parameter as a result of changes in the Mn-O-Mn bond angle.

© 1995 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevLett.75.914
DOI:
10.1103/PhysRevLett.75.914
PACS:
72.15.Gd, 75.30.Kz, 75.50.Cc