Phys. Rev. Lett. 76, 3200–3203 (1996)Imaging Hot-Electron Emission from Metal-Oxide-Semiconductor StructuresReceived 9 November 1995; published in the issue dated 22 April 1996 We have used hot electrons emitted into vacuum from biased metal-oxide-semiconductor (MOS) structures to form a direct image of the spatial emission distribution. Hot-electron emission microscopy allows us to investigate the emission characteristics of biased MOS structures and its correlation with morphology, as well as time-dependent prebreakdown phenomena at high spatial resolution ( ∼20 nm). We show that different oxide structures have very different emission, as well as prebreakdown characteristics. © 1996 The American Physical Society URL:
http://link.aps.org/doi/10.1103/PhysRevLett.76.3200
DOI:
10.1103/PhysRevLett.76.3200
PACS:
73.40.Gk, 07.78.+s, 72.20.Fr, 79.90.+b
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