Phys. Rev. Lett. 76, 3774–3777 (1996)Noise-Induced Roughening Evolution of Amorphous Si films Grown by Thermal EvaporationSee Also: Erratum Received 4 December 1995; published in the issue dated 13 May 1996 We report a growth front morphology study of thermally evaporated amorphous Si films using atomic force microscopy. Since there are no well-defined atomic steps on an amorphous film surface, there is no Schwoebel barrier effect which would give rise to a moundlike morphology. The dynamic scaling characteristics observed during growth are unambiguously explained by a noise-induced growth mechanism. The roughness and growth exponents measured are consistent with the Mullins diffusion model with noise. © 1996 The American Physical Society URL:
http://link.aps.org/doi/10.1103/PhysRevLett.76.3774
DOI:
10.1103/PhysRevLett.76.3774
PACS:
68.55.Jk, 64.60.Ht, 68.35.Bs
See AlsoErratum: H. -N. Yang, Y. -P. Zhao, G. -C. Wang, and T. -M. Lu, Noise-Induced Roughening Evolution of Amorphous Si films Grown by Thermal Evaporation, Phys. Rev. Lett. 77, 1412 (1996). |
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