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APS » Journals » Phys. Rev. Lett. » Volume 76 » Issue 25
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Phys. Rev. Lett. 76, 4769–4772 (1996)

Average Local Order Parameter in Partially Ordered GaInP2

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D. Mao and P. C. Taylor
Department of Physics, University of Utah, Salt Lake City, Utah 84112

Sarah R. Kurtz
National Renewable Energy Laboratory, Golden, Colorado 80401

M. C. Wu
Department of Electrical Engineering, National Tsing Hua University, Hsinchu, Taiwan 30043

W. A. Harrison
Department of Applied Physics, Stanford University, Stanford, California 94395

Received 16 January 1996; published in the issue dated 17 June 1996

The application of a simple point-charge model to NMR spin echo measurements of 71Ga in random and partially ordered films of Ga0.52In0.48P provides the first quantitative and accurate estimate of the average degree of local ordering (average order parameter η) in a ternary III-V semiconductor. The value of η extracted is consistent with theoretical predictions.

© 1996 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevLett.76.4769
DOI:
10.1103/PhysRevLett.76.4769
PACS:
61.66.Dk, 68.55.-a, 68.65.+g, 76.60.Lz
 
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