Phys. Rev. Lett. 77, 2053–2056 (1996)Conduction-Valence Landau Level Mixing EffectReceived 16 January 1996; published in the issue dated 2 September 1996 The electronic Landau level structures of the symmetric Alsb-AlxGa1-xSb-InAs-AlxGa1-xSb-AlSb quantum wells are investigated within a six-band k̇p finite difference method. We demonstrated that the conduction-valence Landau level mixing can yield a significant spin splitting for the InAs conduction-band electrons and therefore produce a prominent electron double-line structure with a nearly field-independent energy separation in the cyclotron-resonance spectra. This mixing effect can also yield strong oscillations in the electron cyclotron-resonance mass, amplitude, and linewidth. © 1996 The American Physical Society URL:
http://link.aps.org/doi/10.1103/PhysRevLett.77.2053
DOI:
10.1103/PhysRevLett.77.2053
PACS:
73.20.Dx, 73.40.Kp, 78.66.Fd
See AlsoComment: Junichiro Kono and Bruce D. McCombe, Comment on “Conduction-Valence Landau-Level Mixing Effect”, Phys. Rev. Lett. 80, 2497 (1998). Reply: Jih-Chen Chiang, Shiow-Fon Tsay, Z. M. Chau, and Ikai Lo, Chiang et al. Reply:, Phys. Rev. Lett. 80, 2498 (1998). |
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