Phys. Rev. Lett. 77, 3407–3410 (1996)Identification of the Native Vacancy Defects in Both Sublattices of ZnSxSe1-x by Positron AnnihilationReceived 15 February 1996; published in the issue dated 14 October 1996 We show how positron annihilation can distinguish vacancies in the different sublattices of a binary compound by performing experiments in ZnSxSe1-x layers. We identify the Se vacancies (VSe) in N-doped and the Zn vacancies (VZn) in Cl-doped material by the shape of the core electron momentum distribution. The charge of the defect involving VSe is neutral or negative in p-type ZnSxSe1-x, suggesting that VSe is complexed with an acceptor. The concentration of the VSe complexes is high (≥1018cm-3), indicating that their role is important in the electrical compensation of p-type ZnSxSe1-x. © 1996 The American Physical Society URL:
http://link.aps.org/doi/10.1103/PhysRevLett.77.3407
DOI:
10.1103/PhysRevLett.77.3407
PACS:
71.55.Gs, 73.61.Ga, 78.70.Bj
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