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Phys. Rev. Lett. 77, 3839–3842 (1996)

Anharmonic Decay of Vibrational States in Amorphous Silicon

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Jaroslav Fabian and Philip B. Allen
Department of Physics, State University of New York at Stony Brook, Stony Brook, New York 11794-3800

Received 15 May 1996; revised 22 August 1996; published in the issue dated 28 October 1996

Anharmonic decay rates are calculated for a realistic atomic model of amorphous silicon. The results show that the vibrational states decay on picosecond time scales and their decay rates increase with increasing frequency. These results disagree with a recent experiment. In contrast to predictions of the fracton model, we find no evidence that the anharmonic decay is inhibited in the region of localized states.

© 1996 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevLett.77.3839
DOI:
10.1103/PhysRevLett.77.3839
PACS:
63.20.Kr, 63.20.Pw, 63.50.+x