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APS » Journals » Phys. Rev. Lett. » Volume 77 » Issue 27
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Phys. Rev. Lett. 77, 5413–5416 (1996)

Carrier-Controlled Doping Efficiency in La2CuO4+δ

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Z. G. Li, H. H. Feng, Z. Y. Yang, A. Hamed, S. T. Ting, and P. H. Hor
Department of Physics and Texas Center for Superconductivity at the University of Houston, Houston, Texas 77204-5932

S. Bhavaraju, J. F. DiCarlo, and A. J. Jacobson
Texas Center for Superconductivity at the University of Houston, Houston, Texas 77204-5641

Received 10 October 1995; revised 15 October 1996; published in the issue dated 30 December 1996

We have studied the excess oxygen content and hole concentration in 110 °C annealed La2CuO4+δ prepared by electrochemical oxidation for 0<δ<0.12. Two distinct sites were observed with doping efficiency of 2 or 1.3 holes per excess oxygen atom. The occupation of the two different sites is determined by a critical carrier concentration Pc≈0.06. As a consequence, a sudden increase of chemical potential of doped holes at Pc is suggested.

© 1996 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevLett.77.5413
DOI:
10.1103/PhysRevLett.77.5413
PACS:
74.25.Bt, 74.72.Dn
 
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