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Phys. Rev. Lett. 78, 891–894 (1997)

Band Mobility of Photoexcited Electrons in Bi12SiO20

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Ivan Biaggio, Robert W. Hellwarth, and Jouni P. Partanen
University of Southern California, Departments of Physics and Electrical Engineering, Los Angeles, California 90089-0484

Received 10 May 1996; published in the issue dated 3 February 1997

We determine the band mobility of photoexcited electrons in cubic n-type Bi12SiO20. We measure a room-temperature mobility of 3.4±0.5 cm2/(Vs) that decreases monotonically to 1.7±0.3 cm2/(Vs) as the temperature is increased to 200 °C. We show that electrons in Bi12SiO20 form large polarons. Our results are predicted by strong coupling polaron theory if the band mass of the electrons is chosen to be 2.0±0.1 electron masses. We determine the electron-phonon coupling constant and effective longitudinal optical phonon frequency required for this prediction from the available infrared reflectivity spectrum of Bi12SiO20.

© 1997 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevLett.78.891
DOI:
10.1103/PhysRevLett.78.891
PACS:
63.20.Kr, 42.70.Nq, 72.10.Di, 72.20.Fr