Phys. Rev. Lett. 78, 1335–1338 (1997)Gate Control of Spin-Orbit Interaction in an Inverted In0.53Ga0.47As/In0.52Al0.48As HeterostructureReceived 23 July 1996; published in the issue dated 17 February 1997 We have confirmed that a spin-orbit interaction in an inverted In0.53Ga0.47As/In0.52Al0.48As quantum well can be controlled by applying a gate voltage. This result shows that the spin-orbit interaction of a two-dimensional electron gas depends on the surface electric field. The dominant mechanism for the change in the spin-orbit interaction parameter can be attributed to the Rashba term. This inverted In0.53Ga0.47As/In0.52Al0.48As heterostructure is one of the promising materials for the spin-polarized field effect transistor which is proposed by Datta and Das [Appl. Phys. Lett. 56, 665 (1990)]. © 1997 The American Physical Society URL:
http://link.aps.org/doi/10.1103/PhysRevLett.78.1335
DOI:
10.1103/PhysRevLett.78.1335
PACS:
73.20.Dx, 71.70.Ej, 75.25.+z
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