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Phys. Rev. Lett. 79, 2101–2104 (1997)

Chemical Potential Shift in Overdoped and Underdoped La2-xSrxCuO4

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A. Ino, T. Mizokawa, and A. Fujimori
Department of Physics, University of Tokyo, Bunkyo-ku, Tokyo 113, Japan

K. Tamasaku, H. Eisaki, S. Uchida, T. Kimura, T. Sasagawa, and K. Kishio
Department of Superconductivity, University of Tokyo, Bunkyo-ku, Tokyo 113, Japan

Received 6 January 1997; published in the issue dated 15 September 1997

The downward shift of the electron chemical potential μ with hole doping in La2-xSrxCuO4 has been deduced from the shifts of photoemission and inverse-photoemission spectra. While the shift is large ( 1.5 eV/hole) in overdoped samples, it is suppressed ( <0.2 eV/hole) in underdoped samples, implying a divergent charge susceptibility near the metal-insulator transition. In the overdoped regime, the μ and the electronic specific heat coefficient γ are consistently explained within Fermi-liquid theory, whereas the same analysis gives unphysical results in the underdoped regime, indicating the breakdown of the Fermi-liquid picture in the underdoped regime.

© 1997 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevLett.79.2101
DOI:
10.1103/PhysRevLett.79.2101
PACS:
71.30.+h, 71.28.+d, 74.72.Dn, 79.60.Bm