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Phys. Rev. Lett. 79, 3314–3314 (1997)

Comment on ``Theoretical Scanning Tunneling Microscopy Images of the As Vacancy on the GaAs(110) Surface''

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J. Harper1, G. Lengel2, R. E. Allen1, and M. Weimer1
1Department of PhysicsTexas A&M UniversityCollege Station, Texas 77843-4242
2Laboratory for Physical SciencesCollege Park, Maryland 20740

Received 8 October 1996; published in the issue dated 27 October 1997

A Comment on the Letter by Hanchul Kim and James R. Chelikowsky, Phys. Rev. Lett. 77, 1063 (1996). The authors of the Letter offer a Reply.

© 1997 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevLett.79.3314
DOI:
10.1103/PhysRevLett.79.3314
PACS:
61.16.Ch, 68.35.Dv

See Also

Original Article: Hanchul Kim and James R. Chelikowsky, Theoretical Scanning Tunneling Microscopy Images of the As Vacancy on the GaAs(110) Surface, Phys. Rev. Lett. 77, 1063 (1996).