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Phys. Rev. Lett. 79, 3934–3937 (1997)

Reconstructions of the GaN(0001̅ ) Surface

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A. R. Smith1, R. M. Feenstra1, D. W. Greve2, J. Neugebauer3, and J. E. Northrup4
1Department of Physics, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213
2Department of Electrical and Computer Engineering, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213
3Fritz-Haber-Institut der Max-Planck-Gesellschaft, Faradayweg 4-6, D-14195 Berlin, Germany
4Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, California 94304

Received 20 June 1997; published in the issue dated 17 November 1997

Reconstructions of the GaN(0001̅ ) surface are studied for the first time. Using scanning tunneling microscopy and reflection high-energy electron diffraction, four primary structures are observed: 1×1,3×3,6×6, and c(6×12). On the basis of first-principles calculations, the 1×1 structure is shown to consist of a Ga monolayer bonded to a N-terminated GaN bilayer. From a combination of experiment and theory, it is argued that the 3×3 structure is an adatom-on-adlayer structure with one additional Ga atom per 3×3 unit cell.

© 1997 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevLett.79.3934
DOI:
10.1103/PhysRevLett.79.3934
PACS:
68.35.Bs, 61.16.Ch, 68.55.Jk