Phys. Rev. Lett. 80, 3340–3343 (1998)Coulomb Charging Effect in Self-Assembled Ge Quantum Dots Studied by Admittance SpectroscopySee Also: Erratum Received 27 June 1997; published in the issue dated 13 April 1998 Quantum confined energy levels and the Coulomb charging effect of holes in self-assembled Ge dots embedded in Si barriers are studied using admittance spectroscopy at temperatures above 100 K. Ground state and first excited state occupancies of five to seven holes are identified by varying the Fermi-level position under different applied bias voltages in the admittance measurements. Hole-capture cross sections of the quantum levels are found to be extremely large and energy dependent. © 1998 The American Physical Society URL:
http://link.aps.org/doi/10.1103/PhysRevLett.80.3340
DOI:
10.1103/PhysRevLett.80.3340
PACS:
73.20.Dx, 73.61.Cw
See AlsoErratum: S. K. Zhang, H. J. Zhu, F. Lu, Z. M. Jiang, and Xun Wang, Erratum: Coulomb Charging Effect in Self-Assembled Ge Quantum Dots Studied by Admittance Spectroscopy [Phys. Rev. Lett. 80, 3340 (1998)], Phys. Rev. Lett. 82, 2622 (1999). |
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