Phys. Rev. Lett. 80, 4261–4264 (1998)Temperature-Frequency Scaling in Amorphous Niobium-Silicon near the Metal-Insulator TransitionReceived 29 January 1998; published in the issue dated 11 May 1998 Millimeter-wave transmission measurements have been performed in amorphous niobium-silicon alloy samples where the dc conductivity follows the critical temperature dependence σdc∝T1/2. The real part of the conductivity is obtained at eight frequencies in the range 87–1040 GHz for temperatures 2.6 K and above. In the quantum regime (ħω>kBT) the real part of the high-frequency conductivity has a power-law frequency dependence Reσ(ω)∝ω1/2. For temperatures 16 K and below the data exhibit temperature-frequency scaling predicted by theories of dynamics near quantum-critical points. © 1998 The American Physical Society URL:
http://link.aps.org/doi/10.1103/PhysRevLett.80.4261
DOI:
10.1103/PhysRevLett.80.4261
PACS:
72.15.Rn, 72.30.+q, 72.60.+g
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