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Phys. Rev. Lett. 80, 365–368 (1998)

Observation of Chiral Surface States in the Integer Quantum Hall Effect

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D. P. Druist1, P. J. Turley1, K. D. Maranowski2, E. G. Gwinn1, and A. C. Gossard2
1Physics Department, University of California, Santa Barbara, California 93106
2Materials Engineering Department, University of California, Santa Barbara, California 93106

Received 5 June 1997; published in the issue dated 12 January 1998

We have made experimental studies of low-temperature, high-magnetic field electronic transport in layered, three-dimensional semiconductor structures. In fields that produce the integer quantum Hall effect for transport parallel to the layers, we find deep minima in the vertical conductance Gzz. Between these quantum Hall states, the size dependence of Gzz indicates that vertical transport is through the bulk. Within quantum Hall states, we find that vertical transport is along the surface of the sample, via a “sheath” of extended surface states. This surface sheath is a novel two-dimensional system that exhibits a metallic conductivity e2/h.

© 1998 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevLett.80.365
DOI:
10.1103/PhysRevLett.80.365
PACS:
73.40.Hm, 73.20.Dx