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Phys. Rev. Lett. 80, 600–603 (1998)

Vortex Pinning of Anisotropically Splayed Defects in YBa2Cu3O7-δ

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W. K. Kwok, L. M. Paulius*, V. M. Vinokur, A. M. Petrean†, R. M. Ronningen‡, and G. W. Crabtree
Materials Science and Science and Technology Center for Superconductivity, Argonne National Laboratory, Argonne, Illinois 60435

Received 24 March 1997; published in the issue dated 19 January 1998

Pinning by splayed defects created by 3.9 GeV 197Au29+ ions is studied using transport measurements of vortex motion perpendicular and parallel to the splay plane in untwinned crystals of YBa2Cu3O7-δ. We compare the transport properties of the crystals and demonstrate (i) a new 1/H dependence of the vortex liquid pinning energy, (ii) a crossing of the irreversibility lines before and after irradiation, and (iii) a stronger temperature dependence of the critical current for vortex motion perpendicular to the splay plane than for motion parallel to the splay plane.

© 1998 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevLett.80.600
DOI:
10.1103/PhysRevLett.80.600
PACS:
74.60.Ge

*Present address: Department of Physics, Western Michigan University, Kalamazoo, Michigan 49008.

†

‡Present address: NSCL, Michigan State University, East Lansing, Michigan 48834.

 
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