Phys. Rev. Lett. 81, 2288–2291 (1998)Modification of Si(100) Substrate Bonding by Adsorbed Ge or Si Dimer IslandsReceived 26 May 1998; published in the issue dated 14 September 1998 High-resolution scanning tunneling microscopy studies of the Si(100)-(2×1) surface show a heretofore unrecognized distortion of the substrate structure when islands form during the initial stage of growth of either Si or Ge. The distortion, reflecting the influence of strain, extends at least three dimers away from the adsorption sites. We present a realistic structural model. © 1998 The American Physical Society URL:
http://link.aps.org/doi/10.1103/PhysRevLett.81.2288
DOI:
10.1103/PhysRevLett.81.2288
PACS:
68.35.Bs, 61.16.Ch, 68.35.Md, 73.20.At
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