Phys. Rev. Lett. 81, 413–416 (1998)

Site-Selective Reaction of Br₂ with Second Layer Ga Atoms on the As-rich GaAs(001)-2×4 Surface

Abstract

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Yong Liu, Andrew J. Komrowski, and Andrew C. Kummel^*
Department of Chemistry, 0358, University of California at San Diego, 9500 Gilman Drive, La Jolla, California 92093

Received 3 February 1998; published in the issue dated 13 July 1998

See accompanying Physics Focus

The top layer of the GaAs(001)-(2×4) surface consists of rows of As-As dimers. However, our scanning tunneling microscopy study shows that, in the initial adsorption stage, monoenergetic Br₂ molecules (0.89 eV) react exclusively with the second layer Ga atoms exposed in trenches or at defects on the surface. A simple molecular orbital argument was used to explain the dynamics of forming gallium bromide species at various surface Ga sites.

URL:

http://link.aps.org/doi/10.1103/PhysRevLett.81.413

DOI:

10.1103/PhysRevLett.81.413

PACS:

82.65.My, 61.16.Ch

^*Corresponding author.Electronic address: akummel@ucsd.edu

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Phys. Rev. Lett. 81, 413–416 (1998)

Site-Selective Reaction of Br2 with Second Layer Ga Atoms on the As-rich GaAs(001)-2×4 Surface

Site-Selective Reaction of Br₂ with Second Layer Ga Atoms on the As-rich GaAs(001)-2×4 Surface