Phys. Rev. Lett. 81, 5225–5228 (1998)From the Kondo Regime to the Mixed-Valence Regime in a Single-Electron TransistorReceived 14 July 1998; published in the issue dated 7 December 1998 We demonstrate that the conductance through a single-electron transistor at low temperature is in quantitative agreement with predictions of the equilibrium Anderson model. The Kondo effect is observed when an unpaired electron is localized within the transistor. Tuning the unpaired electron's energy toward the Fermi level in nearby leads produces a crossover between the Kondo and mixed-valence regimes of the Anderson model. © 1998 The American Physical Society URL:
http://link.aps.org/doi/10.1103/PhysRevLett.81.5225
DOI:
10.1103/PhysRevLett.81.5225
PACS:
75.20.Hr, 72.15.Qm, 73.23.Hk
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