Phys. Rev. Lett. 81, 1465–1468 (1998)Passivation versus Etching: Adsorption of I2 on InAs(001)Received 2 April 1998; published in the issue dated 17 August 1998 Halogen adsorption on certain III-V semiconductor surfaces forms ordered overlayers, while other surfaces etch. The microscopic mechanism underlying this behavior is investigated by comparing the adsorption of I2 on In- and As-terminated InAs(001) surfaces. On the In-terminated surface, a well-ordered (1×1) structure forms and all of the iodine attaches to In. The As-terminated surface becomes disordered, however, and iodine attaches to both In and As. These observations can be explained by assuming that iodine initially bonds to In atoms, whether they are in the first or the second layer. © 1998 The American Physical Society URL:
http://link.aps.org/doi/10.1103/PhysRevLett.81.1465
DOI:
10.1103/PhysRevLett.81.1465
PACS:
68.35.-p, 79.60.Dp, 81.05.Ea
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