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Phys. Rev. Lett. 82, 2171–2174 (1999)

Charge Conveyance and Nonlinear Acoustoelectric Phenomena for Intense Surface Acoustic Waves on a Semiconductor Quantum Well

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M. Rotter1, A. V. Kalameitsev2, A. O. Govorov2, W. Ruile3, and A. Wixforth1
1Sektion Physik der LMU and CeNS, Geschwister-Scholl-Platz 1, 80539 München, Germany
2Institute of Semiconductor Physics, 630090 Novosibirsk, Russia
3Siemens AG, Corporate Technology, 81730 München, Germany

Received 7 December 1998; published in the issue dated 8 March 1999

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The combination of semiconductor quantum well structures and strongly piezoelectric crystals leads to a system in which surface acoustic waves with very large amplitudes can interact with charge carriers in the well. The surface acoustic wave induces a dynamic lateral superlattice potential in the plane of the quantum well which is strong enough to spatially break up a two-dimensional electron system into moving wires of trapped charge. This transition is manifested in an increase of the electron transport velocity with sound amplitude, eventually reaching the sound velocity. The sound absorption by the electron system then becomes governed by nonlinearities and is strongly reduced. We study the transition from the linear towards the strongly nonlinear regime of interaction and present a theoretical description of such phenomena in a 2D system.

© 1999 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevLett.82.2171
DOI:
10.1103/PhysRevLett.82.2171
PACS:
73.50.Rb, 72.50.+b, 73.50.Fq