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Phys. Rev. Lett. 82, 2564–2567 (1999)

Self-Gating Effect in the Electron Y-Branch Switch

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Jan-Olof J. Wesström
The Laboratory of Photonics and Microwave Engineering, Department of Electronics, Royal Institute of Technology, Electrum 229, S-164 40 Kista, Sweden

Received 9 September 1998; published in the issue dated 22 March 1999

In an electron waveguide Y-branch switch the electrostatic field applied between two gates switches a current into either of two branches. A novel mode of operation is proposed. For finite source-drain potentials, the switching field is shown to be strongly influenced by the electrochemical potentials in the waveguides. For certain biasing schemes this can be used to achieve gain without external gates and their RC constants. This allows switching up into the THz range in this new class of gateless mesoscopic devices. Conditions for bistability and oscillation are derived.

© 1999 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevLett.82.2564
DOI:
10.1103/PhysRevLett.82.2564
PACS:
73.50.Mx, 72.15.-v