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Phys. Rev. Lett. 82, 3460–3463 (1999)

High Resolution Radial Distribution Function of Pure Amorphous Silicon

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Khalid Laaziri1, S. Kycia2, S. Roorda1,*, M. Chicoine1, J. L. Robertson3, J. Wang4,†, and S. C. Moss4
1Groupe de Recherche en Physique et Technologie des Couches Minces, Département de Physique, Université de Montréal, CP 6128 Succursale Centre-Ville, Montréal, Québec, Canada H3C 3J7
2CHESS, Wilson Laboratory, Cornell University, Ithaca, New York 14853
3Solid State Division, Oak Ridge National Laboratory, P.O. Box 2008, Oak Ridge, Tennessee 37831-6393
4Department of Physics, University of Houston, Houston, Texas 77204-5506

Received 23 November 1998; published in the issue dated 26 April 1999

The structure factor S(Q) of high purity amorphous Si membranes prepared by ion implantation was measured over an extended Q range ( 0.03–55-1). Calculation of the first neighbor shell coordination ( C1) as a function of maximum Q indicates that measurement of S(Q) out to at least 40-1 is required to reliably determine the radial distribution function (RDF). A 2% change in C1 and subtle changes in the rest of the RDF were observed upon annealing, consistent with point defect removal. After annealing at 600 °C, C1 = 3.88, which would explain why amorphous Si is less dense than crystalline Si.

© 1999 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevLett.82.3460
DOI:
10.1103/PhysRevLett.82.3460
PACS:
61.43.Dq, 61.10.Eq

*Email address: Sjoerd.Roorda@umontreal.ca

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