Phys. Rev. Lett. 82, 4464–4467 (1999)Electrically Active and Inactive B Lattice Sites in Ultrahighly B Doped Si(001): An X-Ray Near-Edge Absorption Fine-Structure and High-Resolution Diffraction StudyReceived 2 February 1999; published in the issue dated 31 May 1999 B lattice positions are determined as a function of B concentration CB in ultrahighly doped Si(001):B layers grown by gas-source molecular beam epitaxy from B2H6/Si2H6. For CB≤2.5×1020cm-3, all B atoms reside on tetrahedrally bonded electrically active substitutional Si sites. At higher CB, inactive B is incorporated as B pairs located on single Si sites and oriented primarily along in-plane [100] and [010] directions. The B pairs are sp2 bonded with trigonal coordination while substitutional single B atoms are sp3. A surface reaction path leading to inactive B incorporation is proposed. © 1999 The American Physical Society URL:
http://link.aps.org/doi/10.1103/PhysRevLett.82.4464
DOI:
10.1103/PhysRevLett.82.4464
PACS:
61.72.Tt, 61.10.Ht, 68.55.Ln, 81.15.Gh
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