Phys. Rev. Lett. 82, 4882–4885 (1999)Roughening in Plasma Etch Fronts of Si(100)Received 1 December 1998; published in the issue dated 14 June 1999 A novel etch front roughening phenomenon has been observed in the plasma etching of Si(100). The morphology exhibits a network structure with holes which coarsen with etech time, and a wavelength selection with a characteristic spatial frequency decreasing with time. The average local slope is invariant while the vertical roughness grows as w∼tβ, with β = 0.91±0.03. We suggest a nonlocal Langevin equation based on the redistribution of the reactant gas flux by local morphological features. Numerical calculations give results consistent with our experiments. © 1999 The American Physical Society URL:
http://link.aps.org/doi/10.1103/PhysRevLett.82.4882
DOI:
10.1103/PhysRevLett.82.4882
PACS:
68.55.Jk, 81.65.Cf
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