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APS » Journals » Phys. Rev. Lett. » Volume 82 » Issue 25
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Phys. Rev. Lett. 82, 5148–5151 (1999)

Indium Segregation and Enrichment in Coherent InxGa1-xAs/GaAs Quantum Dots

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X. Z. Liao1, J. Zou1, D. J. H. Cockayne1, R. Leon2, and C. Lobo3
1Australian Key Centre for Microscopy & Microanalysis, The University of Sydney, Sydney NSW 2006, Australia
2Jet Propulsion Laboratory, California Institute of Technology, 4800 Oak Grove Drive, Pasadena, California 91109-8099
3Department of Electronic Materials Engineering, The Australian National University, Canberra ACT 0200, Australia

See Also: Erratum

Received 17 November 1998; published in the issue dated 21 June 1999

Significant differences in the image features of InxGa1-xAs quantum dots (QDs) grown on (001) and vicinal (001) GaAs were seen in [001] on-zone bright-field transmission electron microscope images. Simulated images were obtained by modeling the strain field distribution of the QDs with finite element analysis and then using this model in dynamical electron diffraction contrast simulations. Comparison of the experimental images and the simulated images shows that (i) In segregation exists in the QDs and (ii) the average In content of the QDs is higher than the average In content of the film.

© 1999 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevLett.82.5148
DOI:
10.1103/PhysRevLett.82.5148
PACS:
81.05.Ea, 61.14.Lj, 61.16.Bg, 68.35.Dv

See Also

Erratum: X. Z. Liao, J. Zou, D. J. Cockayne, R. Leon, and C. Lobo, Erratum: Indium Segregation and Enrichment in Coherent InxGa1-xAs/GaAs Quantum Dots [Phys. Rev. Lett. 82, 5148 (1999)], Phys. Rev. Lett. 83, 1273 (1999).

 
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