Phys. Rev. Lett. 82, 568–571 (1999)Vacancy-Assisted Halogen Reactions on Si(100)- (2 × 1)
See accompanying Physics Focus Scanning tunneling microscopy studies of etching of Si(100)-(2×1) show that the rate of terrace pit formation goes through a maximum for surface coverages of θ(Cl) = 0.77±0.05monolayer, in contrast to predictions of conventional models. Using recently calculated energies for different possible surface configurations, we show that a key component in desorption is the formation of a single-atom vacancy adjacent to a volatile SiCl2 unit. The demonstration of vacancy-assisted reaction establishes a self-limited reaction and the sequence of events leading to desorption. © 1999 The American Physical Society URL:
http://link.aps.org/doi/10.1103/PhysRevLett.82.568
DOI:
10.1103/PhysRevLett.82.568
PACS:
61.16.Ch, 61.72.Ff, 81.65.-b
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