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APS » Journals » Phys. Rev. Lett. » Volume 83 » Issue 11
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Phys. Rev. Lett. 83, 2151–2154 (1999)

Anomalous Behavior of the Near-Threshold Photoionization Cross Section of the Neon Isoelectronic Sequence: A Combined Experimental and Theoretical Study

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H. S. Chakraborty1, A. Gray2, J. T. Costello2, P. C. Deshmukh1, G. N. Haque3, E. T. Kennedy2,*, S. T. Manson4, and J-P. Mosnier2
1Department of Physics, Indian Institute of Technology, Madras 600036, India
2Centre for Laser Plasma Research, School of Physical Sciences, Dublin City University, Dublin 9, Ireland
3Department of Physics, Morehouse College, Atlanta, Georgia 30314
4Department of Physics and Astronomy, Georgia State University, Atlanta, Georgia 30303

Received 24 May 1999; published in the issue dated 13 September 1999

We present a combined theoretical and experimental investigation of photoionization along the Ne isoelectronic sequence and show that the near-threshold behavior of the cross section for Si4+ differs radically from the nearby ions in the sequence. We demonstrate that the general nature of the underlying physics implies that dramatic changes in near-threshold behavior may be expected for many other ions.

© 1999 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevLett.83.2151
DOI:
10.1103/PhysRevLett.83.2151
PACS:
32.80.Fb, 32.80.Hd, 52.25.Qt

*Electronic address: eugene.kennedy@dcu.ie

 
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