Phys. Rev. Lett. 83, 2596–2599 (1999)

Isotope Enrichment in Laser-Ablation Plumes and Commensurately Deposited Thin Films

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P. P. Pronko, P. A. VanRompay, Z. Zhang, and J. A. Nees
Center for Ultrafast Optical Science and Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109

Received 12 April 1999; published in the issue dated 27 September 1999

A highly efficient isotope enrichment process is observed directly in laser-ablation plumes generated from ultrafast laser pulses focused on a solid surface. Data are presented for boron nitride and gallium nitride targets using laser pulses of 150–200 fs at 780 nm wavelength. Isotope ratios for B and Ga are observed in a time-of-flight spherical-sector electrostatic analyzer. Enrichment factors of 2 or more above natural abundance are observed for the ratios of B¹⁰/B¹¹ as well as for Ga⁶⁹/Ga⁷¹. These same plumes are used to deposit isotopically enriched films of boron nitride on silicon.

URL:

http://link.aps.org/doi/10.1103/PhysRevLett.83.2596

DOI:

10.1103/PhysRevLett.83.2596

PACS:

61.80.Ba, 32.10.Bi, 32.80.Fb, 79.20.Ds

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Phys. Rev. Lett. 83, 2596–2599 (1999)

Isotope Enrichment in Laser-Ablation Plumes and Commensurately Deposited Thin Films

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