Phys. Rev. Lett. 83, 2989–2992 (1999)Atomic Structure of the GaAs(001)-(2×4) Surface Resolved Using Scanning Tunneling Microscopy and First-Principles TheoryReceived 11 February 1999; published in the issue dated 11 October 1999 The atomic arrangement of the technologically important As-rich GaAs(001)-(2×4) reconstructed surface is determined using bias-dependent scanning tunneling microscopy (STM) and first-principles electronic structure calculations. The STM images reveal the relative position and depth of the atomic-scale features within the trenches between the top-layer As dimers, which are in agreement with the β2(2×4) structural model. The bias-dependent simulated STM images reveal that a retraction of the topmost dangling bond orbitals is the novel electronic mechanism that enables the STM tip to image the trench structure. © 1999 The American Physical Society URL:
http://link.aps.org/doi/10.1103/PhysRevLett.83.2989
DOI:
10.1103/PhysRevLett.83.2989
PACS:
68.35.Bs, 61.16.Ch, 61.50.Ah, 81.05.Ea
|
|
About | Terms and Conditions | Subscriptions | Search | Help
Use of the American Physical Society websites and journals implies that the user has read and agrees to our Terms and Conditions and any applicable Subscription Agreement. Physical Review®, Physical Review Letters®, Reviews of Modern Physics®, and Physical Review Special Topics® are trademarks of the American Physical Society.