Phys. Rev. Lett. 83, 3274–3276 (1999)Subband Population in a Single-Wall Carbon Nanotube DiodeReceived 3 June 1999; published in the issue dated 18 October 1999 We observe current rectification in a molecular diode consisting of a semiconducting single-wall carbon nanotube and an impurity. One-half of the nanotube has no impurity, and it has a current-voltage (I-V) characteristic of a typical semiconducting nanotube. The other half of the nanotube has the impurity on it, and its I-V characteristic is that of a diode. Current in the nanotube diode is carried by holes transported through the molecule's one-dimensional subbands. At 77 K we observe a stepwise increase in the current through the diode as a function of gate voltage, showing that we can control the number of occupied one-dimensional subbands through electrostatic doping. © 1999 The American Physical Society URL:
http://link.aps.org/doi/10.1103/PhysRevLett.83.3274
DOI:
10.1103/PhysRevLett.83.3274
PACS:
73.23.-b, 71.20.Tx, 73.40.Sx, 73.61.Wp
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